产品概述/Product Introduction：

本设备主要是用于制备单晶金刚石。可激发高稳定度的等离子团，从而确保单晶生长的持续性，为合成大尺寸单晶金刚石提供有力保证。

The equipment is mainly used forthe preparation of single crystal diamond.It can excite the plasma cluster with high stability, thus ensuring the continuity of single crystal growth and providing a strong guarantee for the synthesis of large-size single crystal diamond.

产品特点/Product Characteristics：

♦ 制程温度范围:300-1500℃ Temperature process range: 300-1500C

♦ 气路系统:6路 Gas path system: 6 channels

♦ 微波功率:6-12Kw连续可调 Microwave power: 6-12Kw continuously adjustable

♦ 波纹:≤1% Ripple:≤1%

♦ 微波泄露值:＜5Mw/cm2 Microwaveleakagevalue:<5Mw/cm²

♦ 沉积区域:≥100mm Deposition area:≥100 mm

♦ 极限真空:≤10Pa Limit vacuum:≤10Pa

♦ 压力范围:5-300Torr Pressure range: 5-300 Torr

♦ 功率稳定性:＜2% Power stability:<2%

♦ 微波频率:2.45GHz土50MHz Microwave frequency:2.45GHz ± 50MHz

♦ 放电区域:≥100mm Discharge area:≥100mm

♦ 生长速率:>10um Growth rate:>10um